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| FDW256P July 2008 FDW256P 30V P-Channel PowerTrench(R) MOSFET General Description This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V). Features * -8 A, -30 V RDS(ON) = 13.5 m @ V GS = -10 V RDS(ON) = 20 m @ V GS = -4.5 V * Extended V GSS range (25V) for battery applications * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package Applications * Battery protection * DC/DC conversion * Power management * Load switch D S S D G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA=25oC unless otherwise noted Parameter Ratings -30 25 (Note 1) Units V V A W C -8 -50 1.3 0.6 -55 to +150 - Pulsed Power Dissipation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 96 208 C/W Package Marking and Ordering Information Device Marking 256P Device FDW256P Reel Size 13'' Tape width 16mm Quantity 2500 units (c)2008 Fairc hild Semiconductor Corporation FDW256P Rev C1(W) FDW256P Electrical Characteristics Symbol BV DSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C V DS = -24 V, V GS = 0 V V GS = 25 V, V DS = 0 V V GS = -25 V, V DS = 0 V V DS = V GS , ID = -250 A ID = -250 A, Referenced to 25C V GS = -10 V, ID = -8.0 A V GS = -4.5 V, ID = -6.5 A V GS =-10 V, ID =-8.0A, TJ =125C V GS = -10 V, V DS = -5 V, V DS = -5 V ID = -8.0 A Min -30 Typ Max Units V Off Characteristics -23 -1 100 -100 mV/C A nA nA On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance -1 -1.7 5 11 16 15 -3 V mV/C 13.5 20 19 m ID(on) gFS -50 30 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = -15 V, f = 1.0 MHz V GS = 0 V, 2267 599 315 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = -15 V, V GS = -10 V, ID = -1 A, RGEN = 6 15 11 78 45 27 35 125 72 38 ns ns ns ns nC nC nC V DS = -15 V, V GS = -5.0V ID = -8.0 A, 28 7 12 Drain-Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 96 C/W (steady state) when mounted on a 1 inch copper pad on FR-4. b) RJA is 208 C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -1.2 A Voltage -1.2 (Note 2) A V -0.7 -1.2 FDW256P Rev C1(W) FDW256P Typical Characteristics 50 VGS = -10V -6.0V 40 -I D, DRAIN CURRENT (A) -4.5V -4.0V 2.2 -3.5V RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 -I D, DRAIN CURRENT (A) -4.0V -4.5V -5.0V -6.0V -10V VGS = -3.5V 30 20 -3.0V 10 0 0 0.5 1 1.5 2 2.5 3 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 RDS(ON) ON-RESISTANCE (OHM) , 1.6 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE ID = -8A V GS = -10V 1.4 ID = -4.0A 0.04 1.2 0.03 TA = 125o C 0.02 T A = 25o C 0.01 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 -I S, REVERSE DRAIN CURRENT (A) V DS = -5.0V 40 -ID, DRAIN CURRENT (A) 125o C 30 T A = -55o C 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 10 T A = 125o C 1 25o C 0.1 -55 oC 0.01 20 10 0.001 0 1 1.5 2 2.5 3 3.5 4 -V GS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW256P Rev C1(W) FDW256P Typical Characteristics 10 -V GS, GATE-SOURCE VOLTAGE (V) ID = -8A 8 -20V CAPACITANCE (pF) 6 V DS = -10V -15V 4000 f = 1 MHz V GS = 0 V 3200 CISS 2400 4 1600 COSS 800 CRSS 2 0 0 10 20 30 40 50 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 1ms RDS(ON) LIMIT 10ms 100ms 1s 1 V GS = -10V SINGLE PULSE R JA = 208o C/W T A = 25o C 0.01 0.01 DC 10s 50 Figure 8. Capacitance Characteristics. 40 -ID, DRAIN CURRENT (A) 10 SINGLE PULSE RJA = 208C/W TA = 25C 30 20 0.1 10 0.1 1 10 100 0 0.01 0.1 1 t 1, TIME (sec) 10 100 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 RJA(t) = r(t) + RJA o RJA = 208 C/W P(pk) 0.02 0.01 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW256P Rev C1(W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 |
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